High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

Chun Yu Lin; Yi Ju Li; Ming-Dou Ker

doi:10.1109/NEWCAS.2012.6328972

High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

Chun Yu Lin^*, Yi Ju Li, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.

Original language	English
Title of host publication	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Pages	125-128
Number of pages	4
DOIs	https://doi.org/10.1109/NEWCAS.2012.6328972
State	Published - 7 Nov 2012
Event	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 - Montreal, QC, Canada Duration: 17 Jun 2012 → 20 Jun 2012

Publication series

Name	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012

Conference

Conference	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Country/Territory	Canada
City	Montreal, QC
Period	17/06/12 → 20/06/12

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10.1109/NEWCAS.2012.6328972

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Lin, C. Y., Li, Y. J., & Ker, M-D. (2012). High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. In 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 (pp. 125-128). [6328972] (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012). https://doi.org/10.1109/NEWCAS.2012.6328972

@inproceedings{b2f7de5082a24f2a87641042bb969cb7,

title = "High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process",

abstract = "A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.",

author = "Lin, {Chun Yu} and Li, {Yi Ju} and Ming-Dou Ker",

year = "2012",

month = nov,

day = "7",

doi = "10.1109/NEWCAS.2012.6328972",

language = "English",

isbn = "9781467308595",

series = "2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012",

pages = "125--128",

booktitle = "2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012",

note = "2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 ; Conference date: 17-06-2012 Through 20-06-2012",

}

Lin, CY, Li, YJ & Ker, M-D 2012, High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. in 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012., 6328972, 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012, pp. 125-128, 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012, Montreal, QC, Canada, 17/06/12. https://doi.org/10.1109/NEWCAS.2012.6328972

High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. / Lin, Chun Yu; Li, Yi Ju; Ker, Ming-Dou.
2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012. 2012. p. 125-128 6328972 (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.

AB - A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.

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BT - 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012

T2 - 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012

Y2 - 17 June 2012 through 20 June 2012

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Lin CY, Li YJ, Ker M-D. High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. In 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012. 2012. p. 125-128. 6328972. (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012). doi: 10.1109/NEWCAS.2012.6328972

High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

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