Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 24 Feb 2009|
- Bipolar CMOS DMOS (BCD) process
- Body-current injection
- Electrostatic discharge (ESD)
- Lateral DMOS (LDMOS)