Abstract
Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.
Original language | English |
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Pages (from-to) | 389-391 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 30 |
Issue number | 4 |
DOIs | |
State | Published - 24 Feb 2009 |
Keywords
- Bipolar CMOS DMOS (BCD) process
- Body-current injection
- Electrostatic discharge (ESD)
- Lateral DMOS (LDMOS)