High-voltage nLDMOS in waffle-layout style with body-injected technique for ESD protection

Wen Yi Chen*, Ming-Dou Ker

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Scopus citations

    Abstract

    Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly increased in this letter through the waffle-layout style with body-current injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-μm 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (It2) of nLDMOS has a more than 2× increase by the body-current injection.

    Original languageEnglish
    Pages (from-to)389-391
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume30
    Issue number4
    DOIs
    StatePublished - 24 Feb 2009

    Keywords

    • Bipolar CMOS DMOS (BCD) process
    • Body-current injection
    • Electrostatic discharge (ESD)
    • Lateral DMOS (LDMOS)

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