@inproceedings{94b0a1a88f734a41b7cc7cde3df56922,
title = "High-voltage high-current vertical geometry Ga2O3 rectifiers",
abstract = "There are continuing rapid developments in vertical geometry Ga2O3 for high voltage switching applications. Ga2O3 is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping and the availability of large diameter, relatively inexpensive substrates. These include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are already cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy tremendous advantages in terms of process maturity, an advantage that is especially true for Si, where the ability to precisely process the material has resulted in devices such as super-junctions that surpass the unipolar {"}limit{"}. Continued development of low defect substrates, optimized epi growth and surface treatments and improved device design and processing methods for Ga2O3 are still required to push the experimental results closer to their theoretical values. Even 3 μm epi layers with doping concentration of 1016 cm-3 should have a theoretical breakdown voltage of ∼1800V. The actual experimental value of VB is currently well below the theoretical predictions. Thermal management is a key issue in Ga2O3 power devices for practical high current devices and initial studies have appeared on both the experimental and theoretical fronts. We summarize progress in edge termination design, temperature measurement using thermoreflectance-based thermography to measure the thermal rise and decay of the active diodes, failure under forward bias and development of large current (up to 130A) arrays.",
keywords = "Edge termination, Field plate, Gallium oxide, On-state resistance, Power converters, Rectifiers, Switching, Wide bandgap semiconductor",
author = "Minghan Xian and Chaker Fares and Patrick Carey and Fan Ren and Marko Tadjer and Liao, {Yu Te} and Chang, {Chin Wei} and Jenshan Lin and Ribhu Sharma and Law, {Mark E.} and Raad, {Peter E.} and Komarov, {Pavel L.} and Zahabul Islam and Aman Haque and Akito Kuramata and Pearton, {S. J.}",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Oxide-based Materials and Devices XI 2020 ; Conference date: 03-02-2020 Through 06-02-2020",
year = "2020",
doi = "10.1117/12.2550769",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Rogers, {David J.} and Look, {David C.} and Teherani, {Ferechteh H.}",
booktitle = "Oxide-based Materials and Devices XI",
address = "美國",
}