TY - JOUR
T1 - High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts
AU - Lee, Yao Jen
AU - Chao, Tien-Sheng
AU - Huang, Tiao Yuan
PY - 2005/7/1
Y1 - 2005/7/1
N2 - In this study, the characteristics of DT-pMOSFETs are discussed using the reverse Schottky substrate contacts. With this diode, the DTMOS can be operated at high voltage and temperature. In addition, it exhibited an improved driving current, DIBL, transconductance, and subthreshold slope. The driving current for DTMOS was 20% larger, and was 12 mV improved for DIBL under DTMOS operation. Furthermore, the NBTI effects of DTMOS were also reported for the first time. This is because DTMOS could operate just below 0.7 V of VG due to the junction turn-on behavior. It is interesting to note that the shift of the ΔVTH of pMOSFETs under NBTI measurement was significantly alleviated in the DT operating mode, about 30 mV improved after 10,000 s stressing, due to the alleviated electrical field across the gate oxide which was due to the substrate bias and the threshold voltage adjustment under DTMOS operation.
AB - In this study, the characteristics of DT-pMOSFETs are discussed using the reverse Schottky substrate contacts. With this diode, the DTMOS can be operated at high voltage and temperature. In addition, it exhibited an improved driving current, DIBL, transconductance, and subthreshold slope. The driving current for DTMOS was 20% larger, and was 12 mV improved for DIBL under DTMOS operation. Furthermore, the NBTI effects of DTMOS were also reported for the first time. This is because DTMOS could operate just below 0.7 V of VG due to the junction turn-on behavior. It is interesting to note that the shift of the ΔVTH of pMOSFETs under NBTI measurement was significantly alleviated in the DT operating mode, about 30 mV improved after 10,000 s stressing, due to the alleviated electrical field across the gate oxide which was due to the substrate bias and the threshold voltage adjustment under DTMOS operation.
UR - http://www.scopus.com/inward/record.url?scp=20344383719&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2005.01.002
DO - 10.1016/j.microrel.2005.01.002
M3 - Article
AN - SCOPUS:20344383719
SN - 0026-2714
VL - 45
SP - 1119
EP - 1123
JO - Microelectronics and Reliability
JF - Microelectronics and Reliability
IS - 7-8
ER -