High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Tien-Sheng Chao; Yao Jen Lee; Tiao Yuan Huang

doi:10.1109/LED.2003.822656

High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

Tien-Sheng Chao^*, Yao Jen Lee, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

Original language	English
Pages (from-to)	86-88
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	2
DOIs	https://doi.org/10.1109/LED.2003.822656
State	Published - 1 Feb 2004

Keywords

Dynamic threshold voltage MOSFET (DTMOS)
Schottky substrate junction
Temperature effect

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10.1109/LED.2003.822656

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abstract = "In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.",

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N2 - In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

AB - In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.

KW - Dynamic threshold voltage MOSFET (DTMOS)

KW - Schottky substrate junction

KW - Temperature effect

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High-Voltage and High-Temperature Applications of DTMOS With Reverse Schottky Barrier on Substrate Contacts

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Keywords

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