In this letter, for the first time, application of dynamic threshold voltage MOSFET (DTMOS) with reverse Schottky barrier on substrate contacts (RSBSCs) for high voltage and high temperature is presented. By this RSBSC, DTMOS can be operated at high voltage (>0.7 V), and exhibits excellent performance at high temperature in terms of ideal subthreshold slope, low threshold voltage and high driving current.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Feb 2004|
- Dynamic threshold voltage MOSFET (DTMOS)
- Schottky substrate junction
- Temperature effect