High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

Chun Kai Wang; Tien Kun Lin; Yu Zung Chiou; Shoou Jinn Chang; Yan Kuin Su; Cheng-Huang Kuo; Tsun Kai Ko

doi:10.1088/0268-1242/18/12/306

High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

Chun Kai Wang^*, Tien Kun Lin, Yu Zung Chiou, Shoou Jinn Chang, Yan Kuin Su, Cheng-Huang Kuo, Tsun Kai Ko

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

High quality SiO₂ was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D₂ lamp as the excitation source. It was found that the interface state density was only 8.4 × 10¹¹ cm^-2 eV^-1 for photo-CVD SiO₂ layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation I_ds, maximum g_m and gate voltage swing of the devices were 1220 mA mm^-1, 240 mS mm^-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm^-1.

Original language	English
Pages (from-to)	1033-1036
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	18
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/18/12/306
State	Published - 1 Dec 2003

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title = "High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide",

abstract = "High quality SiO2 was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D2 lamp as the excitation source. It was found that the interface state density was only 8.4 × 1011 cm-2 eV-1 for photo-CVD SiO2 layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing of the devices were 1220 mA mm-1, 240 mS mm-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm-1.",

author = "Wang, {Chun Kai} and Lin, {Tien Kun} and Chiou, {Yu Zung} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Cheng-Huang Kuo and Ko, {Tsun Kai}",

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TY - JOUR

T1 - High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

AU - Wang, Chun Kai

AU - Lin, Tien Kun

AU - Chiou, Yu Zung

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Kuo, Cheng-Huang

AU - Ko, Tsun Kai

PY - 2003/12/1

Y1 - 2003/12/1

N2 - High quality SiO2 was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D2 lamp as the excitation source. It was found that the interface state density was only 8.4 × 1011 cm-2 eV-1 for photo-CVD SiO2 layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing of the devices were 1220 mA mm-1, 240 mS mm-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm-1.

AB - High quality SiO2 was successfully deposited on GaN by photochemical vapour deposition (photo-CVD) using a D2 lamp as the excitation source. It was found that the interface state density was only 8.4 × 1011 cm-2 eV-1 for photo-CVD SiO2 layers on GaN prepared at 300°C. AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors were fabricated with photo-CVD oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing of the devices were 1220 mA mm-1, 240 mS mm-1 and 4.5 V, respectively. Even at an evaluated temperature of 300°C, the device still exhibits the maximum transconductance of 180 mS mm-1.

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U2 - 10.1088/0268-1242/18/12/306

DO - 10.1088/0268-1242/18/12/306

M3 - Article

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SN - 0268-1242

VL - 18

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EP - 1036

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

ER -

High transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide

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