High-temperature stability of platinum silicide associated with fluorine implantation

Jiunn Yann Tsai; Bing-Yue Tsui; Mao Chieh Chen

doi:10.1063/1.345327

High-temperature stability of platinum silicide associated with fluorine implantation

Jiunn Yann Tsai^*, Bing-Yue Tsui, Mao Chieh Chen

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

High-temperature stability of the F⁺- or BF⁺ ₂ -implanted PtSi thin film was investigated. For the PtSi films that received F⁺ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F ⁺ implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F⁺-implanted PtSi film.

Original language	English
Pages (from-to)	3530-3533
Number of pages	4
Journal	Journal of Applied Physics
Volume	67
Issue number	7
DOIs	https://doi.org/10.1063/1.345327
State	Published - 1 Dec 1990

Access to Document

10.1063/1.345327

Cite this

@article{f294f2ebc0e04359bee8a3d9dc01efc2,

title = "High-temperature stability of platinum silicide associated with fluorine implantation",

abstract = "High-temperature stability of the F+- or BF+ 2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F + implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.",

author = "Tsai, {Jiunn Yann} and Bing-Yue Tsui and Chen, {Mao Chieh}",

year = "1990",

month = dec,

day = "1",

doi = "10.1063/1.345327",

language = "English",

volume = "67",

pages = "3530--3533",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - High-temperature stability of platinum silicide associated with fluorine implantation

AU - Tsai, Jiunn Yann

AU - Tsui, Bing-Yue

AU - Chen, Mao Chieh

PY - 1990/12/1

Y1 - 1990/12/1

N2 - High-temperature stability of the F+- or BF+ 2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F + implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.

AB - High-temperature stability of the F+- or BF+ 2 -implanted PtSi thin film was investigated. For the PtSi films that received F+ implantation, the film characteristics remain unchanged even after annealing at 800 °C for 90 min, while for those without F + implantation, the film properties begin to degrade after annealing at 750 °C as observed by scanning electron microscopic inspection, Auger electron spectroscopy analysis, Rutherford backscattering spectroscopy analysis, and sheet resistance measurement. The secondary ion mass spectroscopy analysis indicates that the fluorine atoms are segregated to the PtSi/Si interface. A fluorine barrier model is proposed to explain the absence of Pt in-diffusion induced deterioration for the F+-implanted PtSi film.

UR - http://www.scopus.com/inward/record.url?scp=0005910698&partnerID=8YFLogxK

U2 - 10.1063/1.345327

DO - 10.1063/1.345327

M3 - Article

AN - SCOPUS:0005910698

SN - 0021-8979

VL - 67

SP - 3530

EP - 3533

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

High-temperature stability of platinum silicide associated with fluorine implantation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this