High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

Cheng Tien Wan; Yan Kuim Su; Ricky W. Chuang; Hsin-Chieh Yu; Chun Yuan Huang; Yi Shin Wang; Wei Cheng Chen; Wei Heng Lin; Manfred H. Pilkuhn

doi:10.1109/LED.2009.2031131

High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

Cheng Tien Wan^*, Yan Kuim Su, Ricky W. Chuang, Hsin-Chieh Yu, Chun Yuan Huang, Yi Shin Wang, Wei Cheng Chen, Wei Heng Lin, Manfred H. Pilkuhn

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.

Original language	English
Pages (from-to)	1155-1157
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2031131
State	Published - 6 Nov 2009

Keywords

GaAsSb
Lasers
Lasing wavelength stability against temperature shift
MOVPE

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10.1109/LED.2009.2031131

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title = "High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers",

abstract = "In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.",

keywords = "GaAsSb, Lasers, Lasing wavelength stability against temperature shift, MOVPE",

author = "Wan, {Cheng Tien} and Su, {Yan Kuim} and Chuang, {Ricky W.} and Hsin-Chieh Yu and Huang, {Chun Yuan} and Wang, {Yi Shin} and Chen, {Wei Cheng} and Lin, {Wei Heng} and Pilkuhn, {Manfred H.}",

year = "2009",

month = nov,

day = "6",

doi = "10.1109/LED.2009.2031131",

language = "English",

volume = "30",

pages = "1155--1157",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

AU - Wan, Cheng Tien

AU - Su, Yan Kuim

AU - Chuang, Ricky W.

AU - Yu, Hsin-Chieh

AU - Huang, Chun Yuan

AU - Wang, Yi Shin

AU - Chen, Wei Cheng

AU - Lin, Wei Heng

AU - Pilkuhn, Manfred H.

PY - 2009/11/6

Y1 - 2009/11/6

N2 - In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.

AB - In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525 °C). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature λ/dT from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600 °C) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dλ/dT is 0.36 nm/ K; the latter value is higher than those grown at lower temperature.

KW - GaAsSb

KW - Lasers

KW - Lasing wavelength stability against temperature shift

KW - MOVPE

UR - http://www.scopus.com/inward/record.url?scp=70350593571&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2031131

DO - 10.1109/LED.2009.2031131

M3 - Article

AN - SCOPUS:70350593571

SN - 0741-3106

VL - 30

SP - 1155

EP - 1157

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

High-temperature stability of lasing wavelength in GaAsSb/GaAs QW lasers

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Keywords

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