High temperature stability 850-nm In0.15Al0.08Ga 0.77As/Al0.3Ga0.7as vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer

Yi An Chang; Fang I. Lai; Hsin-Chieh Yu; Hao-Chung Kuo; Li Wen Laih; Chun Lung Yu; Shing Chung Wang

doi:10.1143/JJAP.44.L901

High temperature stability 850-nm In_0.15Al_0.08Ga _0.77As/Al_0.3Ga_0.7as vertical-cavity surface-emitting laser with single Al_0.75Ga_0.25As current blocking layer

Yi An Chang^*, Fang I. Lai, Hsin-Chieh Yu, Hao-Chung Kuo, Li Wen Laih, Chun Lung Yu, Shing Chung Wang

^*Corresponding author for this work

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3 Scopus citations

Abstract

In this paper, we employed a high bandgap Al_0.75Ga _0.25As layer acting as an electronic blocking layer in the upper In_0.15Al_0.08Ga_0.77As/Al_0.3Ga _0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53 W/A at 25°:C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al _0.75Ga_0.25As layer were more stable when the substrate temperature was in a range of 25-95°C. The threshold current increased with temperature up to 95°:C was less than 21% and the slope efficiency dropped only 24.5%.

Original language	English
Pages (from-to)	L901-L902
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	28-32
DOIs	https://doi.org/10.1143/JJAP.44.L901
State	Published - 2005

Keywords

850 nm
Current blocking layer
Leakage current
VCSEL

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10.1143/JJAP.44.L901

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@article{c893224a257a4039996fc09a361be7aa,

title = "High temperature stability 850-nm In0.15Al0.08Ga 0.77As/Al0.3Ga0.7as vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer",

abstract = "In this paper, we employed a high bandgap Al0.75Ga 0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga 0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53 W/A at 25°:C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al 0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95°C. The threshold current increased with temperature up to 95°:C was less than 21% and the slope efficiency dropped only 24.5%.",

keywords = "850 nm, Current blocking layer, Leakage current, VCSEL",

author = "Chang, {Yi An} and Lai, {Fang I.} and Hsin-Chieh Yu and Hao-Chung Kuo and Laih, {Li Wen} and Yu, {Chun Lung} and Wang, {Shing Chung}",

year = "2005",

doi = "10.1143/JJAP.44.L901",

language = "English",

volume = "44",

pages = "L901--L902",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "28-32",

}

High temperature stability 850-nm In_0.15Al_0.08Ga _0.77As/Al_0.3Ga_0.7as vertical-cavity surface-emitting laser with single Al_0.75Ga_0.25As current blocking layer. / Chang, Yi An; Lai, Fang I.; Yu, Hsin-Chieh et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 28-32, 2005, p. L901-L902.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High temperature stability 850-nm In0.15Al0.08Ga 0.77As/Al0.3Ga0.7as vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer

AU - Chang, Yi An

AU - Lai, Fang I.

AU - Yu, Hsin-Chieh

AU - Kuo, Hao-Chung

AU - Laih, Li Wen

AU - Yu, Chun Lung

AU - Wang, Shing Chung

PY - 2005

Y1 - 2005

N2 - In this paper, we employed a high bandgap Al0.75Ga 0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga 0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53 W/A at 25°:C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al 0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95°C. The threshold current increased with temperature up to 95°:C was less than 21% and the slope efficiency dropped only 24.5%.

AB - In this paper, we employed a high bandgap Al0.75Ga 0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga 0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53 W/A at 25°:C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al 0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95°C. The threshold current increased with temperature up to 95°:C was less than 21% and the slope efficiency dropped only 24.5%.

KW - 850 nm

KW - Current blocking layer

KW - Leakage current

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=30344478253&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.L901

DO - 10.1143/JJAP.44.L901

M3 - Article

AN - SCOPUS:30344478253

SN - 0021-4922

VL - 44

SP - L901-L902

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 28-32

ER -

High temperature stability 850-nm In_0.15Al_0.08Ga _0.77As/Al_0.3Ga_0.7as vertical-cavity surface-emitting laser with single Al_0.75Ga_0.25As current blocking layer

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