High-Stability IWO Thin-Film Transistors under Microwave Annealing for Low Thermal Budget Application

Yi Xuan Chen, Yi Lin Wang, Fu Jyuan Li, Hui Hsuan Li, Meng Chien Lee, Yu Hsien Lin*, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under MWA treatment at 600 W, the IWO-TFTs exhibited a subthreshold swing (SS) of 144 mV/dec and a threshold voltage (VT) of 0.9 V, demonstrating superior resistance to stress-induced degradation. The TFTs treated with MWA displayed enhanced performance compared to the as-fabricated ones in bias stress stability. As a result, MWA showed significant potential for repairing defects through post-deposition annealing with a reduced thermal budget, thereby presenting a promising application for developing back-end-of-line (BEOL) compatible oxide semiconductor technology.

Original languageEnglish
Pages (from-to)516-520
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume23
DOIs
StatePublished - 2024

Keywords

  • IWO film
  • MWA
  • low thermal budget
  • reliability

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