Abstract
In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under MWA treatment at 600 W, the IWO-TFTs exhibited a subthreshold swing (SS) of 144 mV/dec and a threshold voltage (VT) of 0.9 V, demonstrating superior resistance to stress-induced degradation. The TFTs treated with MWA displayed enhanced performance compared to the as-fabricated ones in bias stress stability. As a result, MWA showed significant potential for repairing defects through post-deposition annealing with a reduced thermal budget, thereby presenting a promising application for developing back-end-of-line (BEOL) compatible oxide semiconductor technology.
Original language | English |
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Pages (from-to) | 516-520 |
Number of pages | 5 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 23 |
DOIs | |
State | Published - 2024 |
Keywords
- IWO film
- MWA
- low thermal budget
- reliability