High Stability Flexible Deep-UV Detector Based on All-Oxide Heteroepitaxial Junction

Wei Han Chen, Chun Hao Ma, Shang Hsien Hsieh, Yu Hong Lai, Yen Chien Kuo, Chia Hao Chen, Sheng Po Chang, Shoou Jinn Chang, Ray Hua Horng, Ying Hao Chu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Transparent flexible electronics constitute a significant research field. Flexible deep-ultraviolet (UV) detectors have received much attention due to their potential in the applications of healthcare, communications, astronomy, and environment monitoring. Recent studies have investigated a variety of flexible photodetectors but show that the transparent, flexible, chemical, and thermal stability performances of these detectors cannot meet the requirements for practical applications. In this study, we demonstrate transparent flexible deep-UV detectors based on the combination of high-quality epitaxial n-type β-Ga2O3 and p-type NiO films as a photodiode on a flexible muscovite substrate. The electrical current of this heterojunction is increased over a 1000 times for on/off ratio under 265 nm wavelength illumination with a reasonable response (<1 s). Moreover, these photodetectors also exhibit good thermal stability as well as excellent mechanical flexibility. Our results exhibit the superior performance of the oxide-based solar-blind deep-UV detectors for advanced flexible sensing and smart applications.

Original languageEnglish
JournalACS Applied Electronic Materials
DOIs
StateAccepted/In press - 2022

Keywords

  • deep UV detector
  • flexible
  • oxides
  • photodiode
  • transparent

Fingerprint

Dive into the research topics of 'High Stability Flexible Deep-UV Detector Based on All-Oxide Heteroepitaxial Junction'. Together they form a unique fingerprint.

Cite this