High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic

Kuan Ti Wang; Tien-Sheng Chao; Woei Cherng Wu; Tsung Yu Chiang; Yi Hong Wu; Wen Luh Yang; Chien Hsing Lee; Tsung Min Hsieh; Jhyy Cheng Liou; Shen De Wang; Tzu Ping Chen; Chien Hung Chen; Chih Hung Lin; Hwi Huang Chen

doi:10.1109/LED.2009.2019255

High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic

Kuan Ti Wang^*, Tien-Sheng Chao, Woei Cherng Wu, Tsung Yu Chiang, Yi Hong Wu, Wen Luh Yang, Chien Hsing Lee, Tsung Min Hsieh, Jhyy Cheng Liou, Shen De Wang, Tzu Ping Chen, Chien Hung Chen, Chih Hung Lin, Hwi Huang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A high programming speed with a low-powerconsumption wrapped-select-gate poly-Si-oxide-nitride-oxidesilicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (I_PGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.

Original language	English
Pages (from-to)	659-661
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LED.2009.2019255
State	Published - 2009

Keywords

Dynamic-threshold
Memory
Poly-Si-oxidenitride-oxide-silicon (SONOS)

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10.1109/LED.2009.2019255

Cite this

@article{95d60b1b1ea34fb4b6c4e5a812b12f6c,

title = "High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic",

abstract = "A high programming speed with a low-powerconsumption wrapped-select-gate poly-Si-oxide-nitride-oxidesilicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (IPGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.",

keywords = "Dynamic-threshold, Memory, Poly-Si-oxidenitride-oxide-silicon (SONOS)",

author = "Wang, {Kuan Ti} and Tien-Sheng Chao and Wu, {Woei Cherng} and Chiang, {Tsung Yu} and Wu, {Yi Hong} and Yang, {Wen Luh} and Lee, {Chien Hsing} and Hsieh, {Tsung Min} and Liou, {Jhyy Cheng} and Wang, {Shen De} and Chen, {Tzu Ping} and Chen, {Chien Hung} and Lin, {Chih Hung} and Chen, {Hwi Huang}",

year = "2009",

doi = "10.1109/LED.2009.2019255",

language = "English",

volume = "30",

pages = "659--661",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic

AU - Wang, Kuan Ti

AU - Chao, Tien-Sheng

AU - Wu, Woei Cherng

AU - Chiang, Tsung Yu

AU - Wu, Yi Hong

AU - Yang, Wen Luh

AU - Lee, Chien Hsing

AU - Hsieh, Tsung Min

AU - Liou, Jhyy Cheng

AU - Wang, Shen De

AU - Chen, Tzu Ping

AU - Chen, Chien Hung

AU - Lin, Chih Hung

AU - Chen, Hwi Huang

PY - 2009

Y1 - 2009

N2 - A high programming speed with a low-powerconsumption wrapped-select-gate poly-Si-oxide-nitride-oxidesilicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (IPGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.

AB - A high programming speed with a low-powerconsumption wrapped-select-gate poly-Si-oxide-nitride-oxidesilicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (IPGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.

KW - Dynamic-threshold

KW - Memory

KW - Poly-Si-oxidenitride-oxide-silicon (SONOS)

UR - http://www.scopus.com/inward/record.url?scp=67649306592&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2019255

DO - 10.1109/LED.2009.2019255

M3 - Article

AN - SCOPUS:67649306592

SN - 0741-3106

VL - 30

SP - 659

EP - 661

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 6

ER -

High-speed multilevel wrapped-select-gate SONOS memory using a novel dynamic

Abstract

Keywords

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