High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt

C. W. Farley; Mau-Chung Chang; P. M. Asbeck; N. H. Sheng; R. Pierson; G. J. Sullivan; K. C. Wang; R. B. Nubling

doi:10.1049/el:19890570

High-speed (f_t = 78ghz) alinas/gainas single heterojunction hbt

C. W. Farley, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, R. Pierson, G. J. Sullivan, K. C. Wang, R. B. Nubling

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒ_t up to 78 GHz and ƒ_max up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒ_max is limited by a large R_bC_bc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

Original language	English
Pages (from-to)	846-847
Number of pages	2
Journal	Electronics Letters
Volume	25
Issue number	13
DOIs	https://doi.org/10.1049/el:19890570
State	Published - 22 Jun 1989

Keywords

Bipolar devices
Digital circuits
Semiconductor devices and materials
Transistors

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10.1049/el:19890570

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title = "High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt",

abstract = "High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.",

keywords = "Bipolar devices, Digital circuits, Semiconductor devices and materials, Transistors",

author = "Farley, {C. W.} and Mau-Chung Chang and Asbeck, {P. M.} and Sheng, {N. H.} and R. Pierson and Sullivan, {G. J.} and Wang, {K. C.} and Nubling, {R. B.}",

year = "1989",

month = jun,

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doi = "10.1049/el:19890570",

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journal = "Electronics Letters",

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T1 - High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt

AU - Farley, C. W.

AU - Chang, Mau-Chung

AU - Asbeck, P. M.

AU - Sheng, N. H.

AU - Pierson, R.

AU - Sullivan, G. J.

AU - Wang, K. C.

AU - Nubling, R. B.

PY - 1989/6/22

Y1 - 1989/6/22

N2 - High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

AB - High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

KW - Bipolar devices

KW - Digital circuits

KW - Semiconductor devices and materials

KW - Transistors

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JO - Electronics Letters

JF - Electronics Letters

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ER -

High-speed (f_t = 78ghz) alinas/gainas single heterojunction hbt

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