High-speed (ft = 78ghz) alinas/gainas single heterojunction hbt

C. W. Farley, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, R. Pierson, G. J. Sullivan, K. C. Wang, R. B. Nubling

    Research output: Contribution to journalArticlepeer-review

    11 Scopus citations

    Abstract

    High-performance AlInAs/GaInAs HBTs for low-power digital circuits have been demonstrated. Large-area devices exhibit high current gain (up to 600), observable down to low currents. Small-area devices display ƒt up to 78 GHz and ƒmax up to 45 GHz. Fitting S-parameter measurements to an equivalent circuit model shows that ƒmax is limited by a large RbCbc time constant in the base circuit. These transistors have been used to fabricate the first frequency divider demonstrated in this material system.

    Original languageEnglish
    Pages (from-to)846-847
    Number of pages2
    JournalElectronics Letters
    Volume25
    Issue number13
    DOIs
    StatePublished - 22 Jun 1989

    Keywords

    • Bipolar devices
    • Digital circuits
    • Semiconductor devices and materials
    • Transistors

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