High speed AlGaAs/GaAs complementary HBT technology realized by multiple MBE growth and merged processing

C. W. Farley, R. J. Anderson, R. B. Bernescut, R. W. Grant, Mau-Chung Chang, K. C. Wang, R. B. Nubling, N. H. Sheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations


A high-performance monolithic Npn/Pnp complementary HBT (heterojunction bipolar transistor) technology involving multiple MBE (molecular beam epitaxy) growths has been developed. Many of the process steps have been merged to simplify concurrent fabrication of Npn and Pnp devices. Pnp devices exhibit fT=20 GHz and fmax=19 GHz. Npn devices show fT=51 GHz and fmax=60 GHz. These cutoff frequencies are 2 to 3 times values previously reported for monolithically integrated Npn and Pnp devices. For the first time, integrated circuits operating at microwave frequencies have been fabricated from both types of devices on the same wafer. Npn-based direct coupled feedback amplifiers (gain blocks) show a gain of 11 dB and a 3-dB bandwidth of 12 GHz. Pnp-based gain blocks show a gain of 8 dB and a 3-dB bandwidth of 6 GHz.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


  • Bandwidth
  • Coupling circuits
  • Cutoff frequency
  • Fabrication
  • Gain
  • Gallium arsenide
  • Heterojunction bipolar transistors
  • Microwave frequencies
  • Microwave integrated circuits
  • Molecular beam epitaxial growth


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