Periodic AlAs0.52Sb0.48/Ga0.47In0.53As quarter-wave distributed Bragg reflectors on InP substrates were prepared and with only eight pairs a peak reflectivity of 90% and a bandwidth of ≥0.2μm were measured. By the addition of P to the GaInAs alloy, this mirror structure would be useful for InP-based surface emitting laser application at 1.3-1.55 μm wavelengths and would be superior to the previously studied GaInAsP/InP structure, where ∼20 pairs are required to achieve similar reflection.
- Quantum optics
- Semiconductor devices and materials
- Semiconductor lasers