High quality YBa2Cu3O7 Josephson junctions made by direct electron beam writing

S. K. Tolpygo; S. Shokhor; B. Nadgorny; Jiunn-Yuan Lin; M. Gurvitch; A. Bourdillon; S. Y. Hou; Julia M. Phillips

doi:10.1063/1.110688

High quality YBa₂Cu₃O₇ Josephson junctions made by direct electron beam writing

S. K. Tolpygo^*, S. Shokhor, B. Nadgorny, Jiunn-Yuan Lin, M. Gurvitch, A. Bourdillon, S. Y. Hou, Julia M. Phillips

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

High-T_c Josephson junctions have been fabricated by direct electron beam writing over YBa₂Cu₃O₇ thin-film microbridges, using scanning transmission electron microscope (STEM) with an accelerating voltage of 80-120 kV. Annealing at 330-380 K increases T _c and I_c of the junctions and makes them more stable. In the operating range of a few degrees below T_c, the junctions show 100% magnetic field modulation of the critical current, microwave-induced Shapiro steps oscillating according to the resistively shunted junction (RSJ) model, and RSJ current-voltage characteristics with I_cRn product up to 0.5-0.6 mV at 75 K and 0.3 mV at 77 K.

Original language	English
Pages (from-to)	1696-1698
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	12
DOIs	https://doi.org/10.1063/1.110688
State	Published - 1 Dec 1993

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title = "High quality YBa2Cu3O7 Josephson junctions made by direct electron beam writing",

abstract = "High-Tc Josephson junctions have been fabricated by direct electron beam writing over YBa2Cu3O7 thin-film microbridges, using scanning transmission electron microscope (STEM) with an accelerating voltage of 80-120 kV. Annealing at 330-380 K increases T c and Ic of the junctions and makes them more stable. In the operating range of a few degrees below Tc, the junctions show 100% magnetic field modulation of the critical current, microwave-induced Shapiro steps oscillating according to the resistively shunted junction (RSJ) model, and RSJ current-voltage characteristics with IcRn product up to 0.5-0.6 mV at 75 K and 0.3 mV at 77 K.",

author = "Tolpygo, {S. K.} and S. Shokhor and B. Nadgorny and Jiunn-Yuan Lin and M. Gurvitch and A. Bourdillon and Hou, {S. Y.} and Phillips, {Julia M.}",

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T1 - High quality YBa2Cu3O7 Josephson junctions made by direct electron beam writing

AU - Tolpygo, S. K.

AU - Shokhor, S.

AU - Nadgorny, B.

AU - Lin, Jiunn-Yuan

AU - Gurvitch, M.

AU - Bourdillon, A.

AU - Hou, S. Y.

AU - Phillips, Julia M.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - High-Tc Josephson junctions have been fabricated by direct electron beam writing over YBa2Cu3O7 thin-film microbridges, using scanning transmission electron microscope (STEM) with an accelerating voltage of 80-120 kV. Annealing at 330-380 K increases T c and Ic of the junctions and makes them more stable. In the operating range of a few degrees below Tc, the junctions show 100% magnetic field modulation of the critical current, microwave-induced Shapiro steps oscillating according to the resistively shunted junction (RSJ) model, and RSJ current-voltage characteristics with IcRn product up to 0.5-0.6 mV at 75 K and 0.3 mV at 77 K.

AB - High-Tc Josephson junctions have been fabricated by direct electron beam writing over YBa2Cu3O7 thin-film microbridges, using scanning transmission electron microscope (STEM) with an accelerating voltage of 80-120 kV. Annealing at 330-380 K increases T c and Ic of the junctions and makes them more stable. In the operating range of a few degrees below Tc, the junctions show 100% magnetic field modulation of the critical current, microwave-induced Shapiro steps oscillating according to the resistively shunted junction (RSJ) model, and RSJ current-voltage characteristics with IcRn product up to 0.5-0.6 mV at 75 K and 0.3 mV at 77 K.

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DO - 10.1063/1.110688

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JF - Applied Physics Letters

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High quality YBa₂Cu₃O₇ Josephson junctions made by direct electron beam writing

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