High quality ultrathin CoTiO3 high-k gate dielectrics

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao; Kuo Lih Chang; Kuang Chien Hsieh

doi:10.1149/1.1391170

High quality ultrathin CoTiO₃ high-k gate dielectrics

Tung Ming Pan, Tan Fu Lei, Tien-Sheng Chao, Kuo Lih Chang, Kuang Chien Hsieh

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A novel high-k cobalt-titanium oxide (CoTiO₃) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO₃Si₃N₄/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO₃ gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

Original language	English
Pages (from-to)	433-434
Number of pages	2
Journal	Electrochemical and Solid-State Letters
Volume	3
Issue number	9
DOIs	https://doi.org/10.1149/1.1391170
State	Published - 1 Sep 2000

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@article{357b10a608254729b4dd262bf625f48e,

title = "High quality ultrathin CoTiO3 high-k gate dielectrics",

abstract = "A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao and Chang, {Kuo Lih} and Hsieh, {Kuang Chien}",

year = "2000",

month = sep,

day = "1",

doi = "10.1149/1.1391170",

language = "English",

volume = "3",

pages = "433--434",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - High quality ultrathin CoTiO3 high-k gate dielectrics

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

AU - Chang, Kuo Lih

AU - Hsieh, Kuang Chien

PY - 2000/9/1

Y1 - 2000/9/1

N2 - A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

UR - http://www.scopus.com/inward/record.url?scp=0034275558&partnerID=8YFLogxK

U2 - 10.1149/1.1391170

DO - 10.1149/1.1391170

M3 - Article

AN - SCOPUS:0034275558

SN - 1099-0062

VL - 3

SP - 433

EP - 434

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

High quality ultrathin CoTiO₃ high-k gate dielectrics

Abstract

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