High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

Tien-Sheng Chao; J. L. Chen; C. S. Lai; Horng-Chih Lin; T. Y. Huang

doi:10.1109/VTSA.1999.786003

High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

Tien-Sheng Chao^*, J. L. Chen, C. S. Lai, Horng-Chih Lin, T. Y. Huang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.1999.786003
State	Published - 1 Jan 1999
Event	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 7 Jun 1999 → 10 Jun 1999

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title = "High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning",

abstract = "In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.",

author = "Tien-Sheng Chao and Chen, {J. L.} and Lai, {C. S.} and Horng-Chih Lin and Huang, {T. Y.}",

year = "1999",

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journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

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note = "null ; Conference date: 07-06-1999 Through 10-06-1999",

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T1 - High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

AU - Chao, Tien-Sheng

AU - Chen, J. L.

AU - Lai, C. S.

AU - Lin, Horng-Chih

AU - Huang, T. Y.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

AB - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

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U2 - 10.1109/VTSA.1999.786003

DO - 10.1109/VTSA.1999.786003

M3 - Conference article

AN - SCOPUS:0032599259

SN - 1524-766X

SP - 74

EP - 77

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Y2 - 7 June 1999 through 10 June 1999

ER -

High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

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