High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen; Tien-Sheng Chao; C. S. Lai; T. Y. Huang

doi:10.1049/el:20000693

High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen^*, Tien-Sheng Chao, C. S. Lai, T. Y. Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

Original language	English
Pages (from-to)	981-983
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	11
DOIs	https://doi.org/10.1049/el:20000693
State	Published - 25 May 2000

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title = "High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment",

abstract = "A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.",

author = "Chen, {C. L.} and Tien-Sheng Chao and Lai, {C. S.} and Huang, {T. Y.}",

year = "2000",

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AU - Chen, C. L.

AU - Chao, Tien-Sheng

AU - Lai, C. S.

AU - Huang, T. Y.

PY - 2000/5/25

Y1 - 2000/5/25

N2 - A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

AB - A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

UR - http://www.scopus.com/inward/record.url?scp=0347947533&partnerID=8YFLogxK

U2 - 10.1049/el:20000693

DO - 10.1049/el:20000693

M3 - Article

AN - SCOPUS:0347947533

SN - 0013-5194

VL - 36

SP - 981

EP - 983

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

Abstract

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