High quality mosfet's with N2O annealed thin TEOS gate oxide

S. C. Sun; H. Y. Chang; T. S. Chao; C. Y. Lu; S. W. Chang; K. Y. Lee; L. S. Lee

doi:10.1109/VTSA.1993.263638

High quality mosfet's with N₂O annealed thin TEOS gate oxide

S. C. Sun, H. Y. Chang, T. S. Chao, C. Y. Lu, S. W. Chang, K. Y. Lee, L. S. Lee

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

Original language	English
Title of host publication	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	109-111
Number of pages	3
ISBN (Electronic)	0780309782
DOIs	https://doi.org/10.1109/VTSA.1993.263638
State	Published - 1 Jan 1993
Event	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Taipei, Taiwan Duration: 12 May 1993 → 14 May 1993

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)	1930-8868

Conference

Conference	1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993
Country/Territory	Taiwan
City	Taipei
Period	12/05/93 → 14/05/93

Access to Document

10.1109/VTSA.1993.263638

Cite this

Sun, S. C., Chang, H. Y., Chao, T. S., Lu, C. Y., Chang, S. W., Lee, K. Y., & Lee, L. S. (1993). High quality mosfet's with N₂O annealed thin TEOS gate oxide. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers (pp. 109-111). [263638] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.1993.263638

Sun, S. C. ; Chang, H. Y. ; Chao, T. S. et al. / High quality mosfet's with N₂O annealed thin TEOS gate oxide. 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. pp. 109-111 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "High quality mosfet's with N2O annealed thin TEOS gate oxide",

abstract = "This paper presents the electrical characteristics of MOSFETs utilizing thin (125 {\AA}) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.",

author = "Sun, {S. C.} and Chang, {H. Y.} and Chao, {T. S.} and Lu, {C. Y.} and Chang, {S. W.} and Lee, {K. Y.} and Lee, {L. S.}",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/VTSA.1993.263638",

language = "English",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "109--111",

booktitle = "1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers",

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note = "null ; Conference date: 12-05-1993 Through 14-05-1993",

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Sun, SC, Chang, HY, Chao, TS, Lu, CY, Chang, SW, Lee, KY & Lee, LS 1993, High quality mosfet's with N₂O annealed thin TEOS gate oxide. in 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers., 263638, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 109-111, 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993, Taipei, Taiwan, 12/05/93. https://doi.org/10.1109/VTSA.1993.263638

High quality mosfet's with N₂O annealed thin TEOS gate oxide. / Sun, S. C.; Chang, H. Y.; Chao, T. S. et al.

1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 1993. p. 109-111 263638 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - This paper presents the electrical characteristics of MOSFETs utilizing thin (125 Å) TEOS deposited gate oxides. Results show that devices of TEOS oxide with N2O anneal have smaller initial drain current degradation under CHC stress condition. The transconduction degradation is slightly worse as compared to thermal gate oxide devices.

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Sun SC, Chang HY, Chao TS, Lu CY, Chang SW, Lee KY et al. High quality mosfet's with N₂O annealed thin TEOS gate oxide. In 1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 1993. p. 109-111. 263638. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.1993.263638