High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao; Luh Yang Wen Luh Yang; C. M. Cheng; Ming Pan Tung Ming Pan; Fu Lei Tan Fu Lei

doi:10.1109/VTSA.2001.934503

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Tien-Sheng Chao, Luh Yang Wen Luh Yang, C. M. Cheng, Ming Pan Tung Ming Pan, Fu Lei Tan Fu Lei

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The irradiation of NH₃ with rapid thermal annealing of (RTA) N₂O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N₂O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

Original language	English
Pages	142-145
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2001.934503
State	Published - 1 Jan 2001
Event	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan Duration: 18 Apr 2001 → 20 Apr 2001

Conference

Conference	2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/01 → 20/04/01

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10.1109/VTSA.2001.934503

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Chao, T-S., Wen Luh Yang, L. Y., Cheng, C. M., Tung Ming Pan, M. P., & Tan Fu Lei, F. L. (2001). High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices. 142-145. Paper presented at 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan. https://doi.org/10.1109/VTSA.2001.934503

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title = "High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices",

abstract = "The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.",

author = "Tien-Sheng Chao and {Wen Luh Yang}, {Luh Yang} and Cheng, {C. M.} and {Tung Ming Pan}, {Ming Pan} and {Tan Fu Lei}, {Fu Lei}",

year = "2001",

month = jan,

day = "1",

doi = "10.1109/VTSA.2001.934503",

language = "English",

pages = "142--145",

note = "null ; Conference date: 18-04-2001 Through 20-04-2001",

}

Chao, T-S, Wen Luh Yang, LY, Cheng, CM, Tung Ming Pan, MP & Tan Fu Lei, FL 2001, 'High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices', Paper presented at 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan, 18/04/01 - 20/04/01 pp. 142-145. https://doi.org/10.1109/VTSA.2001.934503

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices. / Chao, Tien-Sheng; Wen Luh Yang, Luh Yang; Cheng, C. M. et al.

2001. 142-145 Paper presented at 2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, Hsinchu, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

AU - Chao, Tien-Sheng

AU - Wen Luh Yang, Luh Yang

AU - Cheng, C. M.

AU - Tung Ming Pan, Ming Pan

AU - Tan Fu Lei, Fu Lei

PY - 2001/1/1

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N2 - The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

AB - The irradiation of NH3 with rapid thermal annealing of (RTA) N2O incorporates nitrogen at dielectric/polysilicon interface was demonstrated to improve integrity of polyoxide. The deposition of polyoxide on nitrided polysilicon films with the densification of N2O exhibited lower leakage current, higher electric breakdown field, higher electron barrier height and lower electron trapping rate etc. The incorporation of nitrogen at the polyoxide/poly-1 interface also showed improved electrical properties.

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Y2 - 18 April 2001 through 20 April 2001

ER -

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

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