High quality Al2O3 IPD with NH3 surface nitridation

Yeong Yuh Chen; Chao-Hsin Chien; Jen Chung Lou

doi:10.1109/LED.2003.815152

High quality Al₂O₃ IPD with NH₃ surface nitridation

Yeong Yuh Chen^*, Chao-Hsin Chien, Jen Chung Lou

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this letter, the effect of surface NH₃ nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al₂O₃) interpoly capacitors is studied. With NH₃ surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Q_bd) of Al₂O₃ interpoly capacitors with surface NH₃ nitridation.

Original language	English
Pages (from-to)	503-505
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	24
Issue number	8
DOIs	https://doi.org/10.1109/LED.2003.815152
State	Published - Aug 2003

Keywords

AlO
Aluminum oxide
IPD
Interpoly dielectric
Surface NH nitridation

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10.1109/LED.2003.815152

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title = "High quality Al2O3 IPD with NH3 surface nitridation",

abstract = "In this letter, the effect of surface NH3 nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al2O3) interpoly capacitors is studied. With NH3 surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Qbd) of Al2O3 interpoly capacitors with surface NH3 nitridation.",

keywords = "AlO, Aluminum oxide, IPD, Interpoly dielectric, Surface NH nitridation",

author = "Chen, {Yeong Yuh} and Chao-Hsin Chien and Lou, {Jen Chung}",

year = "2003",

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doi = "10.1109/LED.2003.815152",

language = "English",

volume = "24",

pages = "503--505",

journal = "Ieee Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High quality Al2O3 IPD with NH3 surface nitridation

AU - Chen, Yeong Yuh

AU - Chien, Chao-Hsin

AU - Lou, Jen Chung

PY - 2003/8

Y1 - 2003/8

N2 - In this letter, the effect of surface NH3 nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al2O3) interpoly capacitors is studied. With NH3 surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Qbd) of Al2O3 interpoly capacitors with surface NH3 nitridation.

AB - In this letter, the effect of surface NH3 nitridation on the electrical properties and reliability characteristics of aluminum oxide (Al2O3) interpoly capacitors is studied. With NH3 surface nitridation, the formation of an additional layer with lower dielectric constant during post-annealing process can be significantly suppressed, compared to that without nitridation treatment. Furthermore, the presence of a thin Si-N layer can make post-deposition annealing more effective in eliminating traps existing in the as-deposited films. As a result, a smoother interface and smaller electron trapping rate can contribute to the drastically reduced leakage current, enhanced breakdown field and charge to breakdown (Qbd) of Al2O3 interpoly capacitors with surface NH3 nitridation.

KW - AlO

KW - Aluminum oxide

KW - IPD

KW - Interpoly dielectric

KW - Surface NH nitridation

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U2 - 10.1109/LED.2003.815152

DO - 10.1109/LED.2003.815152

M3 - Article

AN - SCOPUS:0042387927

SN - 0741-3106

VL - 24

SP - 503

EP - 505

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 8

ER -

High quality Al₂O₃ IPD with NH₃ surface nitridation

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Keywords

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