High Q broadband copper spiral inductors with Q=45 on proton-bombarded semi-insulating silicon substrate

Heng Ming Hsu, Jiong Guang Su, Yo Sheng Lin, Ming Hao Tseng, Jason Chih Hsien Lin, Jack Yuan Chen Sun, Denny Tang, Tsing Tyan Yang, Ting Sien Tu, Li Fu Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

This paper reports the highest Q-factor inductor on silicon substrate. A local semi-insulating region under the 3μm-thick copper spiral inductor is created by high-energy proton bombardment. For a single-layer spiral 1.5 nH inductor, we obtained Q-factor greater than 25 over broad frequency band from 5-19 GHz and with the highest value being 45. Modeling of the inductor equivalent circuit shows that indeed the improvement of q-factor realists from the increase in the substrate resistivity.

Original languageEnglish
Title of host publication2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages113-116
Number of pages4
ISBN (Electronic)0780373634, 9780780373631
DOIs
StatePublished - 2002
Event3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Taipei, Taiwan
Duration: 6 Aug 20028 Aug 2002

Publication series

Name2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

Conference

Conference3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002
Country/TerritoryTaiwan
CityTaipei
Period6/08/028/08/02

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