High-program/erase-speed SONOS with in situ silicon nanocrystals

Tsung Yu Chiang; Tien-Sheng Chao; Y. H. Wu Yi-Hong; Wen Luh Yang

doi:10.1109/LED.2008.2002944

High-program/erase-speed SONOS with in situ silicon nanocrystals

Tsung Yu Chiang^*, Tien-Sheng Chao, Y. H. Wu Yi-Hong, Wen Luh Yang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<10⁸s for 13% charge loss).

Original language	English
Pages (from-to)	1148-1151
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/LED.2008.2002944
State	Published - 11 Sep 2008

Keywords

Memory window
Nonvolatile memory
Retention time
Silicon nanocrystals (Si-NC)

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10.1109/LED.2008.2002944

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title = "High-program/erase-speed SONOS with in situ silicon nanocrystals",

abstract = "In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<108s for 13% charge loss).",

keywords = "Memory window, Nonvolatile memory, Retention time, Silicon nanocrystals (Si-NC)",

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AU - Chiang, Tsung Yu

AU - Chao, Tien-Sheng

AU - Wu Yi-Hong, Y. H.

AU - Yang, Wen Luh

PY - 2008/9/11

Y1 - 2008/9/11

N2 - In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<108s for 13% charge loss).

AB - In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (<5.5 V), lower operation voltage, high P/E speed, and longer retention time (<108s for 13% charge loss).

KW - Memory window

KW - Nonvolatile memory

KW - Retention time

KW - Silicon nanocrystals (Si-NC)

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DO - 10.1109/LED.2008.2002944

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VL - 29

SP - 1148

EP - 1151

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

High-program/erase-speed SONOS with in situ silicon nanocrystals

Abstract

Keywords

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