High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

You Da Chen; Albert Chin

doi:10.1109/LMWC.2020.3047821

High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

You Da Chen, Albert Chin^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

Original language	English
Article number	9321147
Pages (from-to)	304-307
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LMWC.2020.3047821
State	Published - Mar 2021

Keywords

Insertion loss
Pâ dB
RF power
TX/RX switch
isolation
transceiver

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10.1109/LMWC.2020.3047821

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title = "High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications",

abstract = "A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.",

keywords = "Insertion loss, P{\^a} dB, RF power, TX/RX switch, isolation, transceiver",

author = "Chen, {You Da} and Albert Chin",

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T1 - High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

AU - Chen, You Da

AU - Chin, Albert

PY - 2021/3

Y1 - 2021/3

N2 - A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

AB - A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point (P1 dB) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18-μm CMOS process.

KW - Insertion loss

KW - Pâ dB

KW - RF power

KW - TX/RX switch

KW - isolation

KW - transceiver

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M3 - Article

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 3

M1 - 9321147

ER -

High-Power Switch Using LC Resonator and Asymmetric MOS Transistor for 5G Applications

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Keywords

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