High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

A. R. Kovsh*, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. V. Vasil'ev, Yu M. Shernyakov, D. A. Livshits, M. V. Maximov, D. S. Sizov, N. V. Kryzhanovskaya, N. A. Pikhtin, V. A. Kapitonov, I. S. Tarasov, N. N. Ledentsov, V. M. Ustinov, J. S. Wang, L. Wei, Gray Lin, J. Y. Chi

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells (QW) were presented. High gain submonolayer quantum dots allowed to use broad waveguide design typical for high power laser based on QWs. The results demonstrated the potential of submonolayer technique to form active region of high power laser.

    Original languageEnglish
    Pages (from-to)353-356
    Number of pages4
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Volume5023
    DOIs
    StatePublished - 15 Sep 2003
    Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
    Duration: 17 Jun 200221 Jun 2002

    Keywords

    • Diode lasers
    • Molecular beam epitaxy
    • Semiconductor quantum dots

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