High-power diode-pumped Nd: GdVO4/KGW Raman laser at 578 nm

Yung-Fu Chen*, Hsin-Yuan Huang, C. C. Lee, J. Q. Hsiao, Chia-Han Tsou, H. C. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A diode-pumped neodymium-doped gadolinium vanadate (Nd:GdVO4) laser is developed as a compact efficient yellow light at 578 nm by means of intracavity stimulated Raman scattering (SRS) in a potassium gadolinium tungstate (KGW) crystal and the second-harmonic generation in a lithium triborate crystal. The SRS process with a shift of 768 cm(-1) is achieved by setting the polarization of the fundamental wave along the N-g axis of the KGW crystal. The self-Raman effect arising from the Nd:GdVO4 crystal is systematically explored by employing two kinds of coating specification for the output coupler. With a specific coating on the output coupler to suppress the self-Ram an effect, the maximum output power at 578 nm can reach 3.1 W at a pump power of 32 W. Moreover, two different lengths for the Nd:GdVO4 crystal are individually used to verify the influence of the self-Raman effect on the lasing efficiency. (C) 2020 Optical Society of America

Original languageEnglish
Pages (from-to)5562-5565
Number of pages4
JournalOptics Letters
Volume45
Issue number19
DOIs
StatePublished - 1 Oct 2020

Keywords

  • PORT-WINE STAINS
  • CONTINUOUS-WAVE
  • YELLOW-LIGHT
  • PHOTOCOAGULATION
  • SPECTROSCOPY
  • GENERATION
  • EFFICACY

Fingerprint

Dive into the research topics of 'High-power diode-pumped Nd: GdVO4/KGW Raman laser at 578 nm'. Together they form a unique fingerprint.

Cite this