High power C-doped GaN photoconductive THz emitter

Brahm Pal Singh, Osamu Imafuji, Yutaka Hirose, Yasuyuki Fukushima, Shinichi Takigawa, Daisuke Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report for the first time a carbon-doped gallium nitride based large aperture photoconductive switch grown on the sapphire substrate to generate high power sub-THz waves. The estimated THz wave energy was about 1.5pJ/pulse when this device was pumped by a 266nm wavelength femtosecond laser operating at 1 kHz pulse rate with the average power of 20mW under the dc bias voltage of 110V. The terahertz time domain spectroscopy was performed using a low temperature grown gallium arsenide photoconductive switch detector and the frequency spectrum was found to be in the 0.1-0.2 THz regime.

Original languageEnglish
Title of host publicationIRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics
Pages1004-1005
Number of pages2
DOIs
StatePublished - 1 Dec 2007
EventJoint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007 - Cardiff, United Kingdom
Duration: 3 Sep 20077 Sep 2007

Publication series

NameIRMMW-THz2007 - Conference Digest of the Joint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics

Conference

ConferenceJoint 32nd International Conference on Infrared and Millimetre Waves, and 15th International Conference on Terahertz Electronics, IRMMW-THz2007
Country/TerritoryUnited Kingdom
CityCardiff
Period3/09/077/09/07

Keywords

  • Carbon-doped GaN-PCS
  • THz emitter

Fingerprint

Dive into the research topics of 'High power C-doped GaN photoconductive THz emitter'. Together they form a unique fingerprint.

Cite this