High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

Ray-Hua Horng; Chia En Lee; Chung Yuan Kung; Shao Hua Huang; Dong Sing Wuu

doi:10.1143/JJAP.43.L576

High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

Ray-Hua Horng^*, Chia En Lee, Chung Yuan Kung, Shao Hua Huang, Dong Sing Wuu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have developed a large-area (1.2mm × 1.2mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

Original language	English
Pages (from-to)	L576-L578
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.L576
State	Published - 15 Apr 2004

Keywords

AlGaInP
Copper substrate
Electroplating
Light emitting diodes (LEDs)

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10.1143/JJAP.43.L576

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@article{457a127092ed4abbb8f8213a0db76972,

title = "High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating",

abstract = "We have developed a large-area (1.2mm × 1.2mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.",

keywords = "AlGaInP, Copper substrate, Electroplating, Light emitting diodes (LEDs)",

author = "Ray-Hua Horng and Lee, {Chia En} and Kung, {Chung Yuan} and Huang, {Shao Hua} and Wuu, {Dong Sing}",

year = "2004",

month = apr,

day = "15",

doi = "10.1143/JJAP.43.L576",

language = "English",

volume = "43",

pages = "L576--L578",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

AU - Horng, Ray-Hua

AU - Lee, Chia En

AU - Kung, Chung Yuan

AU - Huang, Shao Hua

AU - Wuu, Dong Sing

PY - 2004/4/15

Y1 - 2004/4/15

N2 - We have developed a large-area (1.2mm × 1.2mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

AB - We have developed a large-area (1.2mm × 1.2mm) chip structure for high-power AlGaInP/mirror/Cu light-emitting diodes (LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional AlGaInP/GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400 mA, corresponding to a ∼30°C rising in the junction temperature. However, the junction temperature increased to 110°C easily for the AlGaInP/GaAs LED sample under a current injection of 400mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.

KW - AlGaInP

KW - Copper substrate

KW - Electroplating

KW - Light emitting diodes (LEDs)

UR - http://www.scopus.com/inward/record.url?scp=3042751839&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.L576

DO - 10.1143/JJAP.43.L576

M3 - Article

AN - SCOPUS:3042751839

SN - 0021-4922

VL - 43

SP - L576-L578

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4 B

ER -

High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating

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