High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Wei Chih Peng; Yew-Chuhg Wu

doi:10.1063/1.1682696

High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

Wei Chih Peng, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.

Original language	English
Pages (from-to)	1841-1843
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1682696
State	Published - 15 Mar 2004

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title = "High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding",

abstract = "The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.",

author = "Peng, {Wei Chih} and Yew-Chuhg Wu",

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doi = "10.1063/1.1682696",

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journal = "Applied Physics Letters",

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AU - Peng, Wei Chih

AU - Wu, Yew-Chuhg

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.

AB - The high-power AlGaInP light-emitting diodes (LED) fabricated on Cu substrates were analyzed. The indium-tin-oxide as the diffusion barrier layer was used to bond the AlGaInP LED structure to a Cu substrate. It was shown that Cu-substrate-bonded LED devices could be operated in a much higher injection forward current, 800 mA. The results show that the luminous intensity of the Cu-substrate LEDs could reach as high as 1230 mcd, which is three times higher than that of the GaAs substrate LEDs.

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U2 - 10.1063/1.1682696

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JO - Applied Physics Letters

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High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding

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