High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm

A. R. Kovsh*, J. S. Wang, R. S. Hsiao, L. P. Chen, D. A. Livshits, Kuo-Jui Lin, V. M. Ustinov, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

High-power narrow ridge waveguide lasers emitting with wavelength around 1.3 μm were realised with a single In 0.36 GaAsN 0.022 quantum well with GaAs barriers. Narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.

Original languageEnglish
Pages (from-to)1726-1728
Number of pages3
JournalElectronics Letters
Volume39
Issue number24
DOIs
StatePublished - 27 Nov 2003

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