High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping

Po Hsun Ho; Yu Ying Yang; Sui An Chou; Ren Hao Cheng; Po Heng Pao; Chao Ching Cheng; Iuliana Radu; Chao Hsin Chien

doi:10.1021/acs.nanolett.3c02757

High-Performance WSe₂ Top-Gate Devices with Strong Spacer Doping

Po Hsun Ho^*, Yu Ying Yang, Sui An Chou, Ren Hao Cheng, Po Heng Pao, Chao Ching Cheng, Iuliana Radu, Chao Hsin Chien^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl₄) as a strong p-dopant for WSe₂ monolayers used in transistors. The HAuCl₄-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 10¹³ cm^-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl₄-WSe₂ system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

Original language	English
Pages (from-to)	10236-10242
Number of pages	7
Journal	Nano letters
Volume	23
Issue number	22
DOIs	https://doi.org/10.1021/acs.nanolett.3c02757
State	Published - 22 Nov 2023

Keywords

contact resistance
p-doping
spacer doping
top-gate transistors
tungsten diselenide

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10.1021/acs.nanolett.3c02757

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title = "High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping",

abstract = "Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.",

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T1 - High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping

AU - Ho, Po Hsun

AU - Yang, Yu Ying

AU - Chou, Sui An

AU - Cheng, Ren Hao

AU - Pao, Po Heng

AU - Cheng, Chao Ching

AU - Radu, Iuliana

AU - Chien, Chao Hsin

PY - 2023/11/22

Y1 - 2023/11/22

N2 - Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

AB - Because of the lack of contact and spacer doping techniques for two-dimensional (2D) transistors, most high-performance 2D devices have been produced with nontypical structures that contain electrical gating in the contact regions. In the present study, we used chloroauric acid (HAuCl4) as a strong p-dopant for WSe2 monolayers used in transistors. The HAuCl4-doped devices exhibited a record-low contact resistance of 0.7 kΩ·μm under a doping concentration of 1.76 × 1013 cm-2. In addition, an extrinsic carrier diffusion phenomenon was discovered in the HAuCl4-WSe2 system. With a suitably designed spacer length for doping, a normally off, high-performance underlap top-gate device can be produced without the application of additional gating in the contact and spacer regions.

KW - contact resistance

KW - p-doping

KW - spacer doping

KW - top-gate transistors

KW - tungsten diselenide

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VL - 23

SP - 10236

EP - 10242

JO - Nano letters

JF - Nano letters

IS - 22

ER -

High-Performance WSe₂ Top-Gate Devices with Strong Spacer Doping

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Keywords

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