High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao; Chin Ho Chung; Hsiao-Wen Zan; Hsin-Fei Meng; Ming Che Ku

doi:10.1063/1.3668086

High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao, Chin Ho Chung, Hsiao-Wen Zan^*, Hsin-Fei Meng, Ming Che Ku

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO ₃/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 ⁴, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

Original language	English
Article number	233308
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3668086
State	Published - 5 Dec 2011

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@article{a381ffec8b6a42678831b6b3ffcd5db9,

title = "High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer",

abstract = "A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.",

author = "Chao, {Yu Chiang} and Chung, {Chin Ho} and Hsiao-Wen Zan and Hsin-Fei Meng and Ku, {Ming Che}",

year = "2011",

month = dec,

day = "5",

doi = "10.1063/1.3668086",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

AU - Chao, Yu Chiang

AU - Chung, Chin Ho

AU - Zan, Hsiao-Wen

AU - Meng, Hsin-Fei

AU - Ku, Ming Che

PY - 2011/12/5

Y1 - 2011/12/5

N2 - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

AB - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=83455200222&partnerID=8YFLogxK

U2 - 10.1063/1.3668086

DO - 10.1063/1.3668086

M3 - Article

AN - SCOPUS:83455200222

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233308

ER -

High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

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