High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation

Che Yu Liu; Chia Yen Huang; Pei Yu Wu; Jhih Kai Huang; Tsung-Sheng Kao; An Je Zhou; Da Wei Lin; Yew-Chuhg Wu; Chun Yen Chang; Hao-Chung Kuo

doi:10.1109/LED.2016.2532352

High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation

Che Yu Liu, Chia Yen Huang, Pei Yu Wu, Jhih Kai Huang, Tsung-Sheng Kao, An Je Zhou, Da Wei Lin, Yew-Chuhg Wu, Chun Yen Chang, Hao-Chung Kuo

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Abstract

This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al₂O₃ dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

Original language	American English
Article number	7419236
Pages (from-to)	452-455
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/LED.2016.2532352
State	Published - Feb 2016

Keywords

Light-emitting diodes
Nanotechnology
Optoelectronic devices

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10.1109/LED.2016.2532352

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Liu, C. Y., Huang, C. Y., Wu, P. Y., Huang, J. K., Kao, T.-S., Zhou, A. J., Lin, D. W., Wu, Y.-C., Chang, C. Y., & Kuo, H.-C. (2016). High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation. Ieee Electron Device Letters, 37(4), 452-455. Article 7419236. https://doi.org/10.1109/LED.2016.2532352

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title = "High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al2O3 passivation",

abstract = "This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.",

keywords = "Light-emitting diodes, Nanotechnology, Optoelectronic devices",

author = "Liu, {Che Yu} and Huang, {Chia Yen} and Wu, {Pei Yu} and Huang, {Jhih Kai} and Tsung-Sheng Kao and Zhou, {An Je} and Lin, {Da Wei} and Yew-Chuhg Wu and Chang, {Chun Yen} and Hao-Chung Kuo",

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doi = "10.1109/LED.2016.2532352",

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AU - Liu, Che Yu

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AU - Wu, Pei Yu

AU - Huang, Jhih Kai

AU - Kao, Tsung-Sheng

AU - Zhou, An Je

AU - Lin, Da Wei

AU - Wu, Yew-Chuhg

AU - Chang, Chun Yen

AU - Kuo, Hao-Chung

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AB - This letter developed the high-performance GaN-based light-emitting diodes (LEDs) for ultraviolet (UV) light emission at 385 nm with the light output power enhanced by up to 52% compared with that of the conventional UV-LEDs. The high-power-efficiency UV-LEDs include sidewall-passivated Al2O3 dielectric nanoscale air voids, which were created using the atomic layer deposition method and act as intermediate media for improving the internal quantum efficiency, reducing threading dislocation, and relaxing strain. The fabricated air void nanostructure also enhanced the light extraction efficiency by ∼32.7%, resulting in a high-power UV light-emitting device.

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KW - Optoelectronic devices

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High-performance ultraviolet 385-nm GaN-based LEDs with embedded nanoscale air voids produced through atomic layer deposition and Al₂O₃ passivation

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