High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng; Chung-Yong Tsai; Albert Chin; F. S. Yeh

doi:10.1109/IEDM.2010.5703392

High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng, Chung-Yong Tsai, Albert Chin, F. S. Yeh

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

47 Scopus citations

Abstract

High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×10² resistance window for 10 ⁴ sec retention at 125°C, and 10⁶ cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	19.4.1-19.4.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703392
State	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703392

Cite this

@inproceedings{b77e7912df7643ae9a930b24d1c1ee4b,

title = "High performance ultra-low energy RRAM with good retention and endurance",

abstract = "High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.",

author = "Cheng, {C. H.} and Chung-Yong Tsai and Albert Chin and Yeh, {F. S.}",

year = "2010",

doi = "10.1109/IEDM.2010.5703392",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "19.4.1--19.4.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Cheng, CH, Tsai, C-Y, Chin, A & Yeh, FS 2010, High performance ultra-low energy RRAM with good retention and endurance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703392, Technical Digest - International Electron Devices Meeting, IEDM, pp. 19.4.1-19.4.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703392

High performance ultra-low energy RRAM with good retention and endurance. / Cheng, C. H.; Tsai, Chung-Yong; Chin, Albert et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 19.4.1-19.4.4 5703392 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance ultra-low energy RRAM with good retention and endurance

AU - Cheng, C. H.

AU - Tsai, Chung-Yong

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

AB - High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

UR - http://www.scopus.com/inward/record.url?scp=79951815188&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703392

DO - 10.1109/IEDM.2010.5703392

M3 - Conference contribution

AN - SCOPUS:79951815188

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 19.4.1-19.4.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

High performance ultra-low energy RRAM with good retention and endurance

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