High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method

Po Hsun Ho*, Ren Hao Cheng, Po Heng Pao, Sui An Chou, Yi Hsiu Huang, Yu Ying Yang, Yu Syuan Wu, Yuan Chun Su, Po Sen Mao, Sheng Kai Su, Bo Jhih Chou, Edward Chen, Terry Y.T. Hung, Ming Yang Li, Chao Ching Cheng, Wei Yen Woon, Szuya Liao, Wen Hao Chang, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Because of the intrinsic low carrier density of monolayer two-dimensional (2D) materials, doping is crucial for the performance of underlap top-gated 2D devices. However, wet etching of a high-k (dielectric constant) dielectric layer is difficult to implement without causing performance deterioration on the devices; therefore, finding a suitable spacer doping technique for 2D devices is indispensable. In this study, we developed a remote doping (RD) method in which defective SiOx can remotely dope the underlying high-k capped 2D regions without directly contacting these materials. This method achieved a doping density as high as 1.4 × 1013 cm-2 without reducing the mobility of the doped materials; after 1 month, the doping concentration remained as high as 1.2 × 1013 cm-2. Defective SiOx can be used to dope most popular 2D transition-metal dichalcogenides. The low-k properties of SiOx render it ideal for spacer doping, which is very attractive from the perspective of circuit operation. In our experiments, MoS2 and WS2 underlap top-gate devices exhibited 10× and 200× increases in their on-currents, respectively, after being doped with SiOx. These results indicate that SiOx doping can be conducted to manufacture high-performance 2D devices.

Original languageEnglish
Pages (from-to)12208-12215
Number of pages8
JournalACS Nano
Issue number13
StatePublished - 11 Jul 2023


  • defective SiO
  • low-k materials
  • remote doping
  • spacer doping
  • top-gate transistors
  • two-dimensional materials


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