High-performance submicrometer ZnON thin-film transistors with record field-effect mobility

Chin I. Kuan; Horng-Chih Lin; Pei-Wen Li; Tiao Yuan Huang

doi:10.1109/LED.2016.2518404

High-performance submicrometer ZnON thin-film transistors with record field-effect mobility

Chin I. Kuan, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm²/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.

Original language	American English
Article number	2518404
Pages (from-to)	303-305
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	37
Issue number	3
DOIs	https://doi.org/10.1109/LED.2016.2518404
State	Published - Mar 2016

Keywords

Mobility
Oxide semiconductors
Submicron
Thin-film transistors (TFTs)
Zinc oxynitride (ZnON)

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10.1109/LED.2016.2518404

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@article{3b378b2b3dda4b9b91fe82720b636b9d,

title = "High-performance submicrometer ZnON thin-film transistors with record field-effect mobility",

abstract = "In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm2/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.",

keywords = "Mobility, Oxide semiconductors, Submicron, Thin-film transistors (TFTs), Zinc oxynitride (ZnON)",

author = "Kuan, {Chin I.} and Horng-Chih Lin and Pei-Wen Li and Huang, {Tiao Yuan}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = mar,

doi = "10.1109/LED.2016.2518404",

language = "American English",

volume = "37",

pages = "303--305",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - High-performance submicrometer ZnON thin-film transistors with record field-effect mobility

AU - Kuan, Chin I.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

AU - Huang, Tiao Yuan

PY - 2016/3

Y1 - 2016/3

N2 - In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm2/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.

AB - In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm2/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.

KW - Mobility

KW - Oxide semiconductors

KW - Submicron

KW - Thin-film transistors (TFTs)

KW - Zinc oxynitride (ZnON)

UR - http://www.scopus.com/inward/record.url?scp=84963812778&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2518404

DO - 10.1109/LED.2016.2518404

M3 - Article

AN - SCOPUS:84963812778

SN - 0741-3106

VL - 37

SP - 303

EP - 305

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 3

M1 - 2518404

ER -

High-performance submicrometer ZnON thin-film transistors with record field-effect mobility

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Keywords

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