In this letter, we demonstrate 0.6-μm ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm2/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.
|Original language||American English|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - 1 Mar 2016|
- Oxide semiconductors
- Thin-film transistors (TFTs)
- Zinc oxynitride (ZnON)