High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu; Yi He Tsai; Che Wei Chen; Jyun Han Li; Yu Hsien Lin; Yao Jen Lee; Guang Li Luo; Chao-Hsin Chien

doi:10.1109/LED.2015.2501841

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

Chung Chun Hsu, Yi He Tsai, Che Wei Chen, Jyun Han Li, Yu Hsien Lin, Yao Jen Lee, Guang Li Luo, Chao-Hsin Chien^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ_Bn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10⁵ at the applied voltage of |V_a|=1 V. Our quantum-well pMOSFET exhibited a high I_ON/I_OFF ratio of ∼ 10⁷(I_S) and a moderate subthreshold swing of 166 mV/decade.

Original language	English
Article number	7331593
Pages (from-to)	8-11
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/LED.2015.2501841
State	Published - Jan 2016

Keywords

Microwave-activated annealing (MWA)
NiSiGe
PMOSFET
Schottky barrier height
quantum well (QW)

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10.1109/LED.2015.2501841

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@article{15e7f2ba1f6b454594191a9e1ea26e0c,

title = "High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process",

abstract = "We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.",

keywords = "Microwave-activated annealing (MWA), NiSiGe, PMOSFET, Schottky barrier height, quantum well (QW)",

author = "Hsu, {Chung Chun} and Tsai, {Yi He} and Chen, {Che Wei} and Li, {Jyun Han} and Lin, {Yu Hsien} and Lee, {Yao Jen} and Luo, {Guang Li} and Chao-Hsin Chien",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2016",

month = jan,

doi = "10.1109/LED.2015.2501841",

language = "English",

volume = "37",

pages = "8--11",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

AU - Hsu, Chung Chun

AU - Tsai, Yi He

AU - Chen, Che Wei

AU - Li, Jyun Han

AU - Lin, Yu Hsien

AU - Lee, Yao Jen

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2016/1

Y1 - 2016/1

N2 - We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

AB - We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (ΦBn) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 105 at the applied voltage of |Va|=1 V. Our quantum-well pMOSFET exhibited a high ION/IOFF ratio of ∼ 107(IS) and a moderate subthreshold swing of 166 mV/decade.

KW - Microwave-activated annealing (MWA)

KW - NiSiGe

KW - PMOSFET

KW - Schottky barrier height

KW - quantum well (QW)

UR - http://www.scopus.com/inward/record.url?scp=84961566872&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2501841

DO - 10.1109/LED.2015.2501841

M3 - Article

AN - SCOPUS:84961566872

SN - 0741-3106

VL - 37

SP - 8

EP - 11

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 1

M1 - 7331593

ER -

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET with Low Thermal Budget Process

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Keywords

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