High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu*, Wen Luh Yang, Chi Chang Wu, Tien-Sheng Chao, Meng Ru Ye, Yu Yuan Su, Po Yang Wang, Ming Jui Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Original languageEnglish
Article number6365747
Pages (from-to)123-125
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - 1 Jan 2013


  • Polyimide (PI)
  • resistive random access memory (ReRAM) devices
  • sol-gel


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