High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu; Wen Luh Yang; Chi Chang Wu; Tien-Sheng Chao; Meng Ru Ye; Yu Yuan Su; Po Yang Wang; Ming Jui Tsai

doi:10.1109/LED.2012.2224633

High-performance polyimide-based ReRAM for nonvolatile memory application

Sheng Hsien Liu^*, Wen Luh Yang, Chi Chang Wu, Tien-Sheng Chao, Meng Ru Ye, Yu Yuan Su, Po Yang Wang, Ming Jui Tsai

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 10⁵) and superior endurance (> 10⁵ cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

Original language	English
Article number	6365747
Pages (from-to)	123-125
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2224633
State	Published - 2013

Keywords

Polyimide (PI)
resistive random access memory (ReRAM) devices
sol-gel

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10.1109/LED.2012.2224633

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title = "High-performance polyimide-based ReRAM for nonvolatile memory application",

abstract = "In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.",

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author = "Liu, {Sheng Hsien} and Yang, {Wen Luh} and Wu, {Chi Chang} and Tien-Sheng Chao and Ye, {Meng Ru} and Su, {Yu Yuan} and Wang, {Po Yang} and Tsai, {Ming Jui}",

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T1 - High-performance polyimide-based ReRAM for nonvolatile memory application

AU - Liu, Sheng Hsien

AU - Yang, Wen Luh

AU - Wu, Chi Chang

AU - Chao, Tien-Sheng

AU - Ye, Meng Ru

AU - Su, Yu Yuan

AU - Wang, Po Yang

AU - Tsai, Ming Jui

PY - 2013

Y1 - 2013

N2 - In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

AB - In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between high-and low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (> 105) and superior endurance (> 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.

KW - Polyimide (PI)

KW - resistive random access memory (ReRAM) devices

KW - sol-gel

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High-performance polyimide-based ReRAM for nonvolatile memory application

Abstract

Keywords

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