High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

Yung Chun Wu; Ting Chang Chang; Chun Yen Chang; Chi Shen Chen; Chun Hao Tu; Po-Tsun Liu; Hsiao-Wen Zan; Ya-Hsiang Tai

doi:10.1063/1.1745104

High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

Yung Chun Wu^*, Ting Chang Chang, Chun Yen Chang, Chi Shen Chen, Chun Hao Tu, Po-Tsun Liu, Hsiao-Wen Zan, Ya-Hsiang Tai

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH₃ plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.

Original language	English
Pages (from-to)	3822-3824
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1745104
State	Published - 10 May 2004

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abstract = "The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH3 plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.",

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AU - Wu, Yung Chun

AU - Chang, Ting Chang

AU - Chang, Chun Yen

AU - Chen, Chi Shen

AU - Tu, Chun Hao

AU - Liu, Po-Tsun

AU - Zan, Hsiao-Wen

AU - Tai, Ya-Hsiang

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH3 plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.

AB - The high-performance polycrystalline silicon thin-film transistor (TFT) with light doped drain (LDD) structure and multiple nanowire channels (MNC) was analyzed. It was observed that the TFT with LDD structure exhibited low leakage currents since the lateral electrical field was reduced in the drain offset region. The MNC were found to generate defects in the polysilicon grin boundary, and had efficient NH3 plasma passivation. It was also observed that the MNC TFTs exhibited low leakage current in the off state, a high ON/OFF current ratio, and a low subthreshold slope.

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VL - 84

SP - 3822

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

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