Abstract
For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
Original language | English |
---|---|
Pages (from-to) | 246-249 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 37 |
Issue number | 1 |
DOIs | |
State | Published - 2006 |
Event | 44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States Duration: 4 Jun 2006 → 9 Jun 2006 |