High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Keyphrases

• Breakdown Voltage 50%
• Channel Layer 50%
• Field-effect Mobility 50%
• Floating Body Effect 50%
• Gate Structure 100%
• High Performance 100%
• Large Field 50%
• On-off Ratio 50%
• Output Characteristics 50%
• Parasitic Bipolar Transistor 50%
• Parasitic Resistance 50%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Self-aligned 100%
• Small Source 50%
• Subthreshold Characteristics 50%
• Threshold Voltage 50%

Engineering

• Bipolar Transistor 50%
• Body Effect 50%
• Breakdown Voltage 50%
• Channel Layer 50%
• Current Ratio 50%
• Experimental Result 50%
• Floating Body 50%
• Parasitic Resistance 50%
• Polysilicon 100%
• Thin-Film Transistor 50%

Earth and Planetary Sciences

• Junction Transistor 100%
• Thin Films 100%
• Threshold Voltage 100%