High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Po Yi Kuo; Tien-Sheng Chao; Ren Jie Wang; Tan Fu Lei

doi:10.1109/LED.2006.870417

High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

Po Yi Kuo^*, Tien-Sheng Chao, Ren Jie Wang, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

Original language	English
Pages (from-to)	258-261
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	27
Issue number	4
DOIs	https://doi.org/10.1109/LED.2006.870417
State	Published - 1 Apr 2006

Keywords

Floating-body effect
Fully salicided
Parasitic bipolar junction transistor
Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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10.1109/LED.2006.870417

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title = "High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure",

abstract = "In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.",

keywords = "Floating-body effect, Fully salicided, Parasitic bipolar junction transistor, Polycrystalline silicon thin-film transistors (poly-Si TFTs)",

author = "Kuo, {Po Yi} and Tien-Sheng Chao and Wang, {Ren Jie} and Lei, {Tan Fu}",

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T1 - High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

AU - Kuo, Po Yi

AU - Chao, Tien-Sheng

AU - Wang, Ren Jie

AU - Lei, Tan Fu

PY - 2006/4/1

Y1 - 2006/4/1

N2 - In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

AB - In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.

KW - Floating-body effect

KW - Fully salicided

KW - Parasitic bipolar junction transistor

KW - Polycrystalline silicon thin-film transistors (poly-Si TFTs)

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U2 - 10.1109/LED.2006.870417

DO - 10.1109/LED.2006.870417

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

ER -

High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure

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Keywords

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