High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications

Yao Jen Lee, Ta Chun Cho, Po Jung Sung, Kuo Hsing Kao, Fu Kuo Hsueh, Fu Ju Hou, Po Cheng Chen, Hsiu Chih Chen, Chien Ting Wu, Shu Han Hsu, Yi Ju Chen, Yao Ming Huang, Yun Fang Hou, Wen Hsien Huang, Chih Chao Yang, Bo Yuan Chen, Kun Lin Lin, Min Cheng Chen, Chang Hong Shen, Guo Wei HuangKun Ping Huang, Michael I. Current, Yi-ming Li, Seiji Samukawa, Wen Fa Wu, Jia Min Shieh, Tien Sheng Chao, Wen Kuan Yeh

Institute of Communications Engineering
Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications

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Material Science

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

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Material Science

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications