High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

Yao Jen Lee; Ta Chun Cho; Po Jung Sung; Kuo Hsing Kao; Fu Kuo Hsueh; Fu Ju Hou; Po Cheng Chen; Hsiu Chih Chen; Chien Ting Wu; Shu Han Hsu; Yi Ju Chen; Yao Ming Huang; Yun Fang Hou; Wen Hsien Huang; Chih Chao Yang; Bo Yuan Chen; Kun Lin Lin; Min Cheng Chen; Chang Hong Shen; Guo Wei Huang; Kun Ping Huang; Michael I. Current; Yi-ming Li; Seiji Samukawa; Wen Fa Wu; Jia Min Shieh; Tien Sheng Chao; Wen Kuan Yeh

doi:10.1109/IEDM.2015.7409638

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications

Yao Jen Lee, Ta Chun Cho, Po Jung Sung, Kuo Hsing Kao, Fu Kuo Hsueh, Fu Ju Hou, Po Cheng Chen, Hsiu Chih Chen, Chien Ting Wu, Shu Han Hsu, Yi Ju Chen, Yao Ming Huang, Yun Fang Hou, Wen Hsien Huang, Chih Chao Yang, Bo Yuan Chen, Kun Lin Lin, Min Cheng Chen, Chang Hong Shen, Guo Wei HuangKun Ping Huang, Michael I. Current, Yi-ming Li, Seiji Samukawa, Wen Fa Wu, Jia Min Shieh, Tien Sheng Chao, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

28 Scopus citations

Abstract

A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO₂ laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (I_on by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (I_on/I_off10⁷) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6.2.1-6.2.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409638
State	Published - 16 Feb 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 7 Dec 2015 → 9 Dec 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	7/12/15 → 9/12/15

Access to Document

10.1109/IEDM.2015.7409638

Cite this

Lee, Y. J., Cho, T. C., Sung, P. J., Kao, K. H., Hsueh, F. K., Hou, F. J., Chen, P. C., Chen, H. C., Wu, C. T., Hsu, S. H., Chen, Y. J., Huang, Y. M., Hou, Y. F., Huang, W. H., Yang, C. C., Chen, B. Y., Lin, K. L., Chen, M. C., Shen, C. H., ... Yeh, W. K. (2015). High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 6.2.1-6.2.4). Article 7409638 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409638

Lee, Yao Jen ; Cho, Ta Chun ; Sung, Po Jung et al. / High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 6.2.1-6.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{06e6a646ca7747259ee5e66e85395987,

title = "High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications",

abstract = "A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.",

author = "Lee, {Yao Jen} and Cho, {Ta Chun} and Sung, {Po Jung} and Kao, {Kuo Hsing} and Hsueh, {Fu Kuo} and Hou, {Fu Ju} and Chen, {Po Cheng} and Chen, {Hsiu Chih} and Wu, {Chien Ting} and Hsu, {Shu Han} and Chen, {Yi Ju} and Huang, {Yao Ming} and Hou, {Yun Fang} and Huang, {Wen Hsien} and Yang, {Chih Chao} and Chen, {Bo Yuan} and Lin, {Kun Lin} and Chen, {Min Cheng} and Shen, {Chang Hong} and Huang, {Guo Wei} and Huang, {Kun Ping} and Current, {Michael I.} and Yi-ming Li and Seiji Samukawa and Wu, {Wen Fa} and Shieh, {Jia Min} and Chao, {Tien Sheng} and Yeh, {Wen Kuan}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 61st IEEE International Electron Devices Meeting, IEDM 2015 ; Conference date: 07-12-2015 Through 09-12-2015",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409638",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "6.2.1--6.2.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

address = "美國",

}

Lee, YJ, Cho, TC, Sung, PJ, Kao, KH, Hsueh, FK, Hou, FJ, Chen, PC, Chen, HC, Wu, CT, Hsu, SH, Chen, YJ, Huang, YM, Hou, YF, Huang, WH, Yang, CC, Chen, BY, Lin, KL, Chen, MC, Shen, CH, Huang, GW, Huang, KP, Current, MI, Li, Y, Samukawa, S, Wu, WF, Shieh, JM, Chao, TS & Yeh, WK 2015, High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409638, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 6.2.1-6.2.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409638

High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications. / Lee, Yao Jen; Cho, Ta Chun; Sung, Po Jung et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 6.2.1-6.2.4 7409638 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications

AU - Lee, Yao Jen

AU - Cho, Ta Chun

AU - Sung, Po Jung

AU - Kao, Kuo Hsing

AU - Hsueh, Fu Kuo

AU - Hou, Fu Ju

AU - Chen, Po Cheng

AU - Chen, Hsiu Chih

AU - Wu, Chien Ting

AU - Hsu, Shu Han

AU - Chen, Yi Ju

AU - Huang, Yao Ming

AU - Hou, Yun Fang

AU - Huang, Wen Hsien

AU - Yang, Chih Chao

AU - Chen, Bo Yuan

AU - Lin, Kun Lin

AU - Chen, Min Cheng

AU - Shen, Chang Hong

AU - Huang, Guo Wei

AU - Huang, Kun Ping

AU - Current, Michael I.

AU - Li, Yi-ming

AU - Samukawa, Seiji

AU - Wu, Wen Fa

AU - Shieh, Jia Min

AU - Chao, Tien Sheng

AU - Yeh, Wen Kuan

PY - 2015/2/16

Y1 - 2015/2/16

N2 - A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

AB - A junctionless (JL) fin thin film transistor (FinTFT) with a novel shell doping profile (SDP) formed by a damage-free conformal molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is demonstrated and studied. MWA drives in and partially activates the MLD dopants; the resultant SDP features an ultra-shallow depth (< 5nm) and an abrupt steepness (< 0.8 nm/dec). The dopant activation of the devices experienced MLD and MWA is further enhanced by the nonmelting COLSA without dopant diffusion, and which can also avoid fin deformation and recover surface defects left by fin patterning. Thanks to the enhanced dopant activation by COLSA, the SDP-FinTFTs overall exhibit better performance than the SDP-FinTFTs without COLSA and the conventional implanted (imp) FinTFTs in terms of subthreshold swing (S.S.), on-currents (Ion by 160% compared to the SDP-FinTFTs without COLSA) and on/off current ratio (Ion/Ioff107) for 3D stacked ICs applications. Our results reveal the potential of the proposed SDP formed by MLD, MWA and COLSA enabling a JLFinTFT showing excellent performance.

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U2 - 10.1109/IEDM.2015.7409638

DO - 10.1109/IEDM.2015.7409638

M3 - Conference contribution

AN - SCOPUS:84963994596

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 6.2.1-6.2.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015

Y2 - 7 December 2015 through 9 December 2015

ER -

Lee YJ, Cho TC, Sung PJ, Kao KH, Hsueh FK, Hou FJ et al. High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO₂ laser annealing for 3D stacked ICs applications. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 6.2.1-6.2.4. 7409638. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409638