High performance P-channel schottky barrier thin-film transistors with PtSi source/drain

Ming Hsien Lee; Tiao Yuan Huang; Kuan Lin Yeh; Horng-Chih Lin

High performance P-channel schottky barrier thin-film transistors with PtSi source/drain

Ming Hsien Lee, Tiao Yuan Huang, Kuan Lin Yeh, Horng-Chih Lin^*

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi ₂ S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.

Original language	English
Pages	99-103
Number of pages	5
State	Published - Oct 2005
Event	Thin Film Transistor Technologies VII - Proceedings of the International Symposium - Honolulu, HI, United States Duration: 4 Oct 2004 → 6 Oct 2004

Conference

Conference	Thin Film Transistor Technologies VII - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	4/10/04 → 6/10/04

Cite this

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title = "High performance P-channel schottky barrier thin-film transistors with PtSi source/drain",

abstract = "In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi 2 S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.",

author = "Lee, {Ming Hsien} and Huang, {Tiao Yuan} and Yeh, {Kuan Lin} and Horng-Chih Lin",

year = "2005",

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language = "English",

pages = "99--103",

note = "Thin Film Transistor Technologies VII - Proceedings of the International Symposium ; Conference date: 04-10-2004 Through 06-10-2004",

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AU - Lee, Ming Hsien

AU - Huang, Tiao Yuan

AU - Yeh, Kuan Lin

AU - Lin, Horng-Chih

PY - 2005/10

Y1 - 2005/10

N2 - In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi 2 S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.

AB - In this work, PtSi which has low valence-band barrier height is employed as the source/drain (S/D) material in p-channel Schottky barrier poly-Si thin-film transistors (SBTFTs) with field-induced drain (FID). This results in 5 times improvement in device's on-current as compared to the counterpart with CoSi 2 S/D. In the meantime, the inherent high off-state leakage current observed in conventional SBTFTs is successfully suppressed by the implementation of electrical junctions induced by a sub-gate, further improving the on/off current ratio.

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M3 - Paper

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T2 - Thin Film Transistor Technologies VII - Proceedings of the International Symposium

Y2 - 4 October 2004 through 6 October 2004

ER -

High performance P-channel schottky barrier thin-film transistors with PtSi source/drain

Abstract

Conference

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