High-performance nonvolatile HfO2 nanocrystal memory

Yu Hsien Lin*, Chao-Hsin Chien, Ching Tzung Lin, Chun Yen Chang, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

In this letter, we demonstrate high-performance non-volatile HfO2 nanocrystal memory utilizing spinodal phase separation of Hf-silicate thin film by 900 °C rapid thermal annealing. With this technique, a remarkably high nanocrystal density of as high as 0.9 ∼ 1.9 × 1012 cm-2 with an average size < 10 nm can be easily achieved. Because HfO2 nanocrystals are well embedded inside an SiO2-rich matrix and due to their sufficiently deep energy level, we, for the first time, have demonstrated superior characteristics of the nanocrystal memories in terms of a considerably large memory window, high-speed program/erase (P/ E) (1 μs/0.1 ms), long retention time greater than 108 s for 10% charge loss, and excellent endurance after 106 P/E cycles.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number3
DOIs
StatePublished - 1 Mar 2005

Keywords

  • Hafnium oxide
  • Nanocrystals
  • Nonvolatile memories
  • Phase separation

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