High-performance Ni/SiO 2 /Si programmable metallization cell

Kuan Liang Lin; Yi Ming Tseng; Jun Hung Lin; Jiann Shieh; Yao Jen Lee; Tuo-Hung Hou; Tan Fu Lei

doi:10.1109/INEC.2011.5991718

High-performance Ni/SiO ₂ /Si programmable metallization cell

Kuan Liang Lin^*, Yi Ming Tseng, Jun Hung Lin, Jiann Shieh, Yao Jen Lee, Tuo-Hung Hou, Tan Fu Lei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Resistive switching in Ni/SiO ₂ /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO ₂ and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991718
State	Published - 26 Sep 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

Joule-heating effect
Ni filament
programmable metallization cell
resistive switching
SiO2

Access to Document

10.1109/INEC.2011.5991718

Cite this

@inproceedings{ed4ac864c61c4d3f93e0c94e89de26c9,

title = "High-performance Ni/SiO 2 /Si programmable metallization cell",

abstract = " Resistive switching in Ni/SiO 2 /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO 2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.",

keywords = "Joule-heating effect, Ni filament, programmable metallization cell, resistive switching, SiO2",

author = "Lin, {Kuan Liang} and Tseng, {Yi Ming} and Lin, {Jun Hung} and Jiann Shieh and Lee, {Yao Jen} and Tuo-Hung Hou and Lei, {Tan Fu}",

year = "2011",

month = sep,

day = "26",

doi = "10.1109/INEC.2011.5991718",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Lin, KL, Tseng, YM, Lin, JH, Shieh, J, Lee, YJ, Hou, T-H & Lei, TF 2011, High-performance Ni/SiO ₂ /Si programmable metallization cell. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991718, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991718

TY - GEN

T1 - High-performance Ni/SiO 2 /Si programmable metallization cell

AU - Lin, Kuan Liang

AU - Tseng, Yi Ming

AU - Lin, Jun Hung

AU - Shieh, Jiann

AU - Lee, Yao Jen

AU - Hou, Tuo-Hung

AU - Lei, Tan Fu

PY - 2011/9/26

Y1 - 2011/9/26

N2 - Resistive switching in Ni/SiO 2 /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO 2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.

AB - Resistive switching in Ni/SiO 2 /Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO 2 and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ∼400, excellent data retention, and good immunity to read disturbance, are also revealed.

KW - Joule-heating effect

KW - Ni filament

KW - programmable metallization cell

KW - resistive switching

KW - SiO2

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U2 - 10.1109/INEC.2011.5991718

DO - 10.1109/INEC.2011.5991718

M3 - Conference contribution

AN - SCOPUS:80052985896

SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

ER -