High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing

Chien Liu; Hsuan-Han Chen; Yi-Chun Tung; Wei-Chun Wang; Zhong-Ying Huang; Bing-Yang Shih; Szu-Yen Hsiung; Shih-An Wang; Yu-Chi Fan; Tsung-Ming Lee; Chien-Liang Lin; Zi-You Huang; Hsiu-Ming Liu; Sheng Lee; Wu-Ching Chou; Chun-Hu Cheng; Hsiao-Hsuan Hsu

doi:10.7567/1347-4065/ab6420

High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing

Chien Liu, Hsuan-Han Chen, Yi-Chun Tung, Wei-Chun Wang, Zhong-Ying Huang, Bing-Yang Shih, Szu-Yen Hsiung, Shih-An Wang, Yu-Chi Fan, Tsung-Ming Lee, Chien-Liang Lin, Zi-You Huang, Hsiu-Ming Liu, Sheng Lee, Wu-Ching Chou, Chun-Hu Cheng, Hsiao-Hsuan Hsu^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics

Original language	English
Article number	01
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	59
DOIs	https://doi.org/10.7567/1347-4065/ab6420
State	Published - 1 Apr 2020
Event	International Conference on Solid State Devices and Materials (SSDM) - Nagoya, Japan Duration: 2 Sep 2019 → 5 Sep 2019

Keywords

FERROELECTRICITY

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10.7567/1347-4065/ab6420

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Liu, C., Chen, H.-H., Tung, Y.-C., Wang, W.-C., Huang, Z.-Y., Shih, B.-Y., Hsiung, S.-Y., Wang, S.-A., Fan, Y.-C., Lee, T.-M., Lin, C.-L., Huang, Z.-Y., Liu, H.-M., Lee, S., Chou, W.-C., Cheng, C.-H., & Hsu, H.-H. (2020). High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing. Japanese Journal of Applied Physics, Part 2: Letters, 59, Article 01. https://doi.org/10.7567/1347-4065/ab6420

@article{3a562a72ac76423dadd994147a0ab6fd,

title = "High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing",

abstract = "In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics",

keywords = "FERROELECTRICITY",

author = "Chien Liu and Hsuan-Han Chen and Yi-Chun Tung and Wei-Chun Wang and Zhong-Ying Huang and Bing-Yang Shih and Szu-Yen Hsiung and Shih-An Wang and Yu-Chi Fan and Tsung-Ming Lee and Chien-Liang Lin and Zi-You Huang and Hsiu-Ming Liu and Sheng Lee and Wu-Ching Chou and Chun-Hu Cheng and Hsiao-Hsuan Hsu",

year = "2020",

month = apr,

day = "1",

doi = "10.7567/1347-4065/ab6420",

language = "English",

volume = "59",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

note = "International Conference on Solid State Devices and Materials (SSDM) ; Conference date: 02-09-2019 Through 05-09-2019",

}

Liu, C, Chen, H-H, Tung, Y-C, Wang, W-C, Huang, Z-Y, Shih, B-Y, Hsiung, S-Y, Wang, S-A, Fan, Y-C, Lee, T-M, Lin, C-L, Huang, Z-Y, Liu, H-M, Lee, S, Chou, W-C, Cheng, C-H & Hsu, H-H 2020, 'High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing', Japanese Journal of Applied Physics, Part 2: Letters, vol. 59, 01. https://doi.org/10.7567/1347-4065/ab6420

TY - JOUR

T1 - High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing

AU - Liu, Chien

AU - Chen, Hsuan-Han

AU - Tung, Yi-Chun

AU - Wang, Wei-Chun

AU - Huang, Zhong-Ying

AU - Shih, Bing-Yang

AU - Hsiung, Szu-Yen

AU - Wang, Shih-An

AU - Fan, Yu-Chi

AU - Lee, Tsung-Ming

AU - Lin, Chien-Liang

AU - Huang, Zi-You

AU - Liu, Hsiu-Ming

AU - Lee, Sheng

AU - Chou, Wu-Ching

AU - Cheng, Chun-Hu

AU - Hsu, Hsiao-Hsuan

PY - 2020/4/1

Y1 - 2020/4/1

N2 - In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics

AB - In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics

KW - FERROELECTRICITY

U2 - 10.7567/1347-4065/ab6420

DO - 10.7567/1347-4065/ab6420

M3 - Article

SN - 0021-4922

VL - 59

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

M1 - 01

T2 - International Conference on Solid State Devices and Materials (SSDM)

Y2 - 2 September 2019 through 5 September 2019

ER -

High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing

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Keywords

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