High-performance monolayer MoS2 nanosheet GAA transistor

Bo Jhih Chou, Yun Yan Chung, Wei Sheng Yun, Chen Feng Hsu, Ming Yang Li, Sheng Kai Su, San Lin Liew, Vincent Duen Huei Hou, Chien Wei Chen, Chi Chung Kei, Yun Yang Shen, Wen Hao Chang, T. Y. Lee, Chao Ching Cheng, Iuliana P. Radu, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this article, a 0.7 nm thick monolayer MoS2 nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-κ metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410 μA μm−1 with a large on/off ratio of 6 × 108 at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩ μm in monolayer MoS2 NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.

Original languageEnglish
Article number125204
JournalNanotechnology
Volume35
Issue number12
DOIs
StatePublished - 18 Mar 2024

Keywords

  • gate-all-around (GAA)
  • nanosheet (NS)
  • transition metal dichalcogenides (TMDs)

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